isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 9/6/97 db92521-aas/a1 option g 7.62 0.26 0.5 dimensions in mm surface mount option sm 10.16 7.0 6.0 1.2 7.62 3.0 13 max 3.35 4.0 3.0 10.2 9.5 2.54 0.26 7.62 6.62 1.2 0.6 1.4 0.9 0.5 approvals l ul recognised, file no. e91231 'x' specification approvals ll ll l vde 0884 in 3 available lead forms : - - std - g form - smd approved to cecc 00802 l certified to en60950 by the following test bodies :- nemko - certificate no. p96101299 fimko - registration no. 190469-01..22 semko - reference no. 9620076 01 demko - reference no. 305567 description the is201-63 optically coupled isolator consists of an infrared light emitting diode and a npn silicon photo transistor in a standard 6 pin dual in line plastic package. features l options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. l high bv ceo (70v min) l high isolation voltage (3.75kv rms ) l all electrical parameters 100% tested l custom electrical selections available applications l dc motor controllers l industrial systems controllers l measuring instruments l signal transmission between systems of different potentials and impedances optically coupled isolator phototransistor output 1 34 6 25 absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 60ma reverse voltage 6v power dissipation 105mw output transistor collector-emitter voltage bv ceo 70v collector-base voltage bv cbo 70v emitter-collector voltage bv eco 6v power dissipation 160mw power dissipation total power dissipation 200mw (derate linearly 2.67mw/ c above 25c) is201-63 is201x63
db92521-aas/a1 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.65 v i f = 60ma reverse voltage (v r )6vi r = 10 m a reverse current (i r )10 m av r = 6v output collector-emitter breakdown (bv ceo )70 v i c = 1ma ( note 2 ) collector-base breakdown (bv cbo )70 v i c = 100 m a emitter-collector breakdown (bv eco ) 6 v i e = 100 m a collector-emitter dark current (i ceo )50nav ce = 10v coupled current transfer ratio (ctr) 75 % 10ma i f , 10v v ce 10 % 1ma i f , 10v v ce collector-emitter saturation voltagev ce(sat) 0.4 v 10ma i f , 2ma i c input to output isolation voltage v iso 3750 v rms see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) turn-on time ton 3.0 m sv ce = 5v , turn-off time toff 5 m si f = 2ma, r l = 75 w ( fig 1) 9/6/97 electrical characteristics ( t a = 25c unless otherwise noted ) output output r l = 75 w input 10% 90% 90% 10% t on t r fig 1 v cc t off t f note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory.
db92521-aas/a1 9/6/97 50 -30 0 25 50 75 100 125 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 0 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature -30 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 100 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 i f = 10ma i c = 2ma forward current i f (ma) ambient temperature t a ( c ) 0 0.5 1.0 1.5 i f = 1ma v ce = 10v relative current transfer ratio vs. ambient temperature relative current transfer ratio -30 0 25 50 75 100 ambient temperature t a ( c ) 0 0.5 1.0 1.5 i f = 10ma v ce = 10v relative current transfer ratio vs. ambient temperature relative current transfer ratio -30 0 25 50 75 100 1 2 5 10 20 50 0 0.4 0.6 0.8 1.0 1.2 0.2 1.4 v ce = 10v t a = 25c relative current transfer ratio relative current transfer ratio vs. forward current forward current i f (ma)
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